| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -120V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −100V |
| 集电极连续输出电流ICCollector Current(IC) | -1A |
| 截止频率fTTranstion Frequency(fT) | 120MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 140~400 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | −200mV/-0.2V |
| 耗散功率PcPoWer Dissipation | 900mW/0.9W |
| Description & Applications | PNP / NPN Epitaxial Planar Silicon Transistors Features • Adoption of FBET, MBIT processes. • High breakdown voltage and large current capacity. • High-speed switching. • Ultrasmall size making it easy to provide high-density, small-sized hybrid ICs. |
| 描述与应用 | PNP/ NPN平面外延硅晶体管 特点 •通过FBET，MBIT过程。 高击穿电压和大电流的能力。 •高速开关。 •超小尺寸，使其易于提供高密度，小尺寸的混合集成电路 |