| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 15V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 12V |
| 集电极连续输出电流ICCollector Current(IC) | 35mA |
| 截止频率fTTranstion Frequency(fT) | 6Ghz |
| 直流电流增益hFEDC Current Gain(hFE) | 90 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 300mW/0.3W |
| Description & Applications | NPN 6 GHz wideband transistor Features Very high power gain Low noise figure Very low intermodulation distortion Applications RF wideband amplifiers and oscillators |
| 描述与应用 | NPN6 GHz的宽带晶体管 特点 非常高的功率增益 低噪声系数 非常低的互调失真 应用 射频宽带放大器和振荡器 |