| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 40V |
| 集电极连续输出电流IC Collector Current(IC) | 500mA/0.5A |
| 基极输入电阻R1 Input Resistance(R1) | 1KΩ/Ohm |
| 基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 10KΩ/Ohm |
| 电阻比(R1/R2) Resistance Ratio | 0.1 |
| 直流电流增益hFE DC Current Gain(hFE) | 56 |
| 截止频率fT Transtion Frequency(fT) | 200MHz |
| 耗散功率Pc Power Dissipation | 0.2W/200mW |
| Description & Applications | Features Epitaxial Planar Die Construction Complementary PNP Types Available (DDTB) Built-In Biasing Resistors, R1, R2 Available in Lead Free/RoHS Compliant Version |
| 描述与应用 | 特性 外延平面电路小片构建 互补PNP类型有（DDTB） 内置偏置电阻R1，R2 无铅/ 符合RoHS版本 |