| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 60V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流ICCollector Current(IC) | 500mA/0.5A |
| 截止频率fTTranstion Frequency(fT) | 150MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 120~240 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 600mV/0.6V |
| 耗散功率PcPower Dissipation | 200mW/0.2W |
| Description & Applications | NPN general purpose transistor FEATURES • High current • Low voltage • Low collector-emitter saturation voltage APPLICATIONS • General purpose switching and amplification, especially for portable equipment. |
| 描述与应用 | NPN通用晶体管 特点 •高电流 •低电压 •低集电极 - 发射极饱和电压 应用 •通用开关和放大，特别是用于便携式设备。 |