| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 12V |
| 最大漏极电流Id Drain Current | 500mA/0.5A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 145mΩ@ VGS = 4.0V, ID = 250mA |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.5~1.1V |
| 耗散功率Pd Power Dissipation | 500mW/0.5W |
| Description & Applications | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) High Speed Switching Applications • Optimum for high-density mounting in small packages • Low on-resistance: Ron = 395mΩ (max) (@VGS = 1.8 V) Ron = 190mΩ (max) (@VGS = 2.5 V) Ron = 145mΩ (max) (@VGS = 4.0 V) |
| 描述与应用 | 东芝场效应晶体管硅N沟道MOS类型（U-MOSIII） 高速开关应用 •最适用于高密度安装在小包装 •低导通电阻RON =395mΩ（最大）（@ VGS=1.8 V） RON=190mΩ（最大）（@ VGS= 2.5 V） RON =145mΩ（最大）（@ VGS=4.0 V） |