| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | −20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −15V |
| 集电极连续输出电流ICCollector Current(IC) | −100mA/-0.1A |
| 截止频率fTTranstion Frequency(fT) | 5GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 50 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | |
| 耗散功率PcPoWer Dissipation | 1W |
| Description & Applications | PNP 5 GHz wideband transistor DESCRIPTION PNP transistor in a SOT89 envelope. It is intended for use in UHF applications such as broadband aerial amplifiers (30 to 860 MHz) and in microwave amplifiers such as radar systems, spectrum analyzers, etc., using SMD technology. |
| 描述与应用 | PNP5 GHz的宽带晶体管 说明 PNP晶体管在SOT89信封。 它的目的是用于在特高频（UHF）的应用，如宽带天线放大器（30到860 MHz），并在微波放大器，如雷达系统，频谱分析仪等，使用SMD技术。 |