| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 15V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 15V |
| 集电极连续输出电流ICCollector Current(IC) | 150mA/0.15A |
| 截止频率fTTranstion Frequency(fT) | 1.5GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 80 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 1W |
| Description & Applications | NPN 1 GHz wideband transistor DESCRIPTION NPN transistor in a SOT89 plastic envelope intended for application in thick and thin-film circuits. The transistor has extremely good intermodulation properties and a high power gain. |
| 描述与应用 | 1 GHz的宽带晶体管NPN 说明 为SOT89塑料外壳，用于在厚薄膜电路的NPN晶体管。该晶体管具有极其良好的互调性能和高功率增益。 |