| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 12V |
| 集电极连续输出电流ICCollector Current(IC) | 50mA |
| 截止频率fTTranstion Frequency(fT) | 6Ghz |
| 直流电流增益hFEDC Current Gain(hFE) | 50~200 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 300mW/0.3W |
| Description & Applications | NPN 5 GHz wideband transistor FEATURES High power gain Gold metallization ensures excellent reliability SOT323 (S-mini) package. APPLICATIONS It is designed for use in RF amplifiers,mixers and oscillators with signal frequencies up to 1 GHz |
| 描述与应用 | 5 GHz的宽带晶体管NPN 特点 高功率增益 黄金金属确保卓越的可靠性 SOT323封装（S-迷你）。 应用 它是专为使用的RF放大器，混频器和振荡器的信号频率高达1 GHz |