| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 40V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 15V |
| 集电极连续输出电流ICCollector Current(IC) | 200mA/0.2A |
| 截止频率fTTranstion Frequency(fT) | |
| 直流电流增益hFEDC Current Gain(hFE) | 40~120 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 200mV~500mV |
| 耗散功率PcPower Dissipation | 225mW/0.225W |
| Description & Applications | NPN Switching Transistor This device is designed for high speed saturation switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. |
| 描述与应用 | NPN开关晶体管 该设备是专为高速饱和开关集电极 10 mA至100 mA的电流 |