| 最大源漏极电压VdsDrain-Source Voltage | 25v |
| 栅源极击穿电压V(BR)GSGate-Source Voltage | -25v |
| 漏极电流(Vgs=0V)IDSSDrain Current | 2~20ma |
| 关断电压Vgs(off)Gate-Source Cut-off Voltage | -8v |
| 耗散功率PdPower Dissipation | 225mW/0.225W |
| Description & Applications | •N-Channel RF Amplifier Features • This device is designed primarily for electronic switching applications such as low On Resistance analog switching. • Sourced from process 50 •This device is designed primarily for electronic switching applications such as low On Resistance analog switching |
| 描述与应用 | •N沟道RF放大器 •本设备主要用于电子开关应用：如低导通电阻模拟开关设计。 •来源于过程50 •本设备主要用于电子开关应用：如低导通电阻模拟开关 |