| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 50V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 45V |
| 集电极连续输出电流ICCollector Current(IC) | 500mA/0.5A |
| 截止频率fTTranstion Frequency(fT) | 100MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 100~600 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 620mV/0.62V |
| 耗散功率PcPower Dissipation | 250mW/0.25W |
| Description & Applications | NPN Medium Power Transistor • This device is designed for general purpose amplifiers. • Sourced from process 38 |
| 描述与应用 | NPN中等功率晶体管 这个装置是专为通用放大器。 •来源于过程38 |