| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 40V |
| 集电极连续输出电流IC Collector Current(IC) | 200mA |
| Q1基极输入电阻R1 Input Resistance(R1) | 300MHz |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 100~300 |
| Q1电阻比(R1/R2) Q1 Resistance Ratio | 300mV |
| Q2基极输入电阻R1 Input Resistance(R1) | 1000mW |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | Features • NPN General Purpose Amplifier • This device is designed as a general purpose amplifier and switch. • The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. |
| Q2电阻比(R1/R2) Q2 Resistance Ratio | 特点 •NPN通用放大器 •该设备是专为通用放大器和开关。 •有用的动态范围扩展到100毫安作为开关至100 MHz作为一个放大器 |
| 直流电流增益hFE DC Current Gain(hFE) | |
| 截止频率fT Transtion Frequency(fT) | |
| 耗散功率Pc Power Dissipation | |
| Description & Applications | |
| 描述与应用 | |