| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 140V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 110V |
| 集电极连续输出电流ICCollector Current(IC) | 1.5A |
| 截止频率fTTranstion Frequency(fT) | 150MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 500~2000 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 1V |
| 耗散功率PcPower Dissipation | 1W |
| Description & Applications | • NPN Darlington Transistor This device designed for applications requiring extremely high gain at collector currents to 1.0A and high breakdown voltage. • Sourced from process 06. |
| 描述与应用 | •达林顿晶体管NPN This device designed for applications requiring extremely high gain at collector currents to 1.0A and high breakdown voltage. • Sourced from process 06. |