| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 120V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 90V |
| 集电极连续输出电流ICCollector Current(IC) | 3A |
| 截止频率fTTranstion Frequency(fT) | 75MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 25~80 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 50mV~600mV |
| 耗散功率PcPower Dissipation | 1W |
| Description & Applications | NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. |
| 描述与应用 | NPN低饱和晶体管 这些设备的设计与高电流增益和 低饱和电压与集电极电流高达3A的连续。 |