集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 32V |
集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 32V |
集电极连续输出电流ICCollector Current(IC) | 100mA/0.1A |
截止频率fTTranstion Frequency(fT) | 125MHz |
直流电流增益hFEDC Current Gain(hFE) | 120~220 |
管压降VCE(sat)Collector-Emitter Saturation Voltage | 350mV/0.35V |
耗散功率PcPower Dissipation | 300mW/0.3W |
Description & Applications | general purpose transistor NPN Silicon |
描述与应用 | 通用晶体管 NPN硅 |