| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 50V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流ICCollector Current(IC) | 1A |
| 截止频率fTTranstion Frequency(fT) | 215MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 450 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 160mV/0.16V |
| 耗散功率PcPower Dissipation | 500mW/0.5W |
| Description & Applications | Super323 SOT323 NPN SILICON POWER (SWITCHING) TRANSISTOR * 500mW POWER DISSIPATION * IC CONT 1A * 2A Peak Pulse Current * Excellent HFE Characteristics Up To 2A (pulsed) * Extremely Low Equivalent On Resistance; RCE(sat) |
| 描述与应用 | Super323SOT323 NPN硅功率 （开关）晶体管 *500mW的功耗 * CONT IC1A *2A峰值脉冲电流 |