| 最大源漏极电压VdsDrain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
| 最大漏极电流IdDrain Current | 115mA/0.115A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 3.2Ω@ VGS = 5.0V, ID = 0.05A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 1~2V |
| 耗散功率PdPower Dissipation | 200mW/0.2W |
| Description & Applications | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Small-Signal-Transistor Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package |
| 描述与应用 | 双N沟道增强型场效应晶体管 小信号晶体管 特点 双N沟道MOSFET 低导通电阻 低栅极阈值电压 低输入电容 开关速度快吗 低输入/输出漏 超小型表面贴装封装 |