| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 10V |
| 集电极连续输出电流ICCollector Current(IC) | 65mA |
| 截止频率fTTranstion Frequency(fT) | 8Ghz |
| 直流电流增益hFEDC Current Gain(hFE) | 50·150 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 400mV/0.4V |
| 耗散功率PcPower Dissipation | 200mW/0.2W |
| Description & Applications | NPN Silicon Planar RF Transistor Applications For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA. Features Low power applications Low noise figure High transition frequency fT = 8 GHz |
| 描述与应用 | NPN硅平面RF晶体管 应用 对于低噪声和高增益宽带放大器 集电极电流从2 mA到30 mA。 特点 低功耗应用 低噪声系数 过渡频率fT=8 GHz |