| 最大源漏极电压VdsDrain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 10V |
| 最大漏极电流IdDrain Current | 7.5A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 26mΩ@ VGS = 2.5V, ID = 2A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 0.5~1.3V |
| 耗散功率PdPower Dissipation | 1.4W |
| Description & Applications | N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resistance. • 2.5V drive. • Best suited for LiB charging and discharging switch. • Common-drain type. • Halogen free |
| 描述与应用 | N-沟道硅MOSFET 通用开关设备应用 特点 •低导通电阻。 •2.5V驱动。 •最适合LIB充电和放电开关。 •共漏型。 •无卤 |