| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 10V |
| 最大漏极电流Id Drain Current | 2A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.4-1.3V |
| 耗散功率Pd Power Dissipation | 900mW/0.9W |
| Description & Applications | N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive. |
| 描述与应用 | N-沟道硅MOSFET 超高速开关应用 •低导通电阻。 •超高速开关。 •2.5V驱动 |