| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 50V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流ICCollector Current(IC) | 3A |
| 截止频率fTTranstion Frequency(fT) | 100MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 700 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 80mV~370mV |
| 耗散功率PcPower Dissipation | 1.6W |
| Description & Applications | 50 V, 3 A NPN low VCEsat (BISS) transistor FEATURES • SOT89 (SC-62) package • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • Higher efficiency leading to less heat generation • Reduced printed-circuit board requirements. APPLICATIONS • Power management – DC/DC converters – Supply line switching – Battery charger – LCD backlighting. • Peripheral drivers – Driver in low supply voltage applications (e.g. lamps and LEDs). – Inductive load driver (e.g. relays, buzzers and motors). DESCRIPTION NPN low VCEsat transistor in a SOT89 plastic package. |
| 描述与应用 | 50 V，3 A NPN低VCEsat（BISS）晶体管 特点 •SOT89（SC-62）封装 •低集电极 - 发射极饱和电压VCE监测 •高集电极电流能力：IC和ICM •更高的效率，导致产生的热量少 •减少印刷电路板的要求。 应用 •电源管理 - DC/ DC转换器 - 电源线开关 - 电池充电器 - LCD背光。 •外设驱动程序 - 驱动器，在低电源电压应用（如灯 和LED）。 - 感性负载驱动器（如继电器， 蜂鸣器和电机）。 说明 NPN低VCEsat 晶体管塑料封装为SOT89。 |