| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
-50V/50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
-50V/50V |
| 集电极连续输出电流IC Collector Current(IC) |
-100mA/100mA |
| Q1基极输入电阻R1 Input Resistance(R1) |
2.2KΩ/Ohm |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) |
47KΩ/Ohm |
| Q1电阻比(R1/R2) Q1 Resistance Ratio |
0.047 |
| Q2基极输入电阻R1 Input Resistance(R1) |
2.2KΩ/Ohm |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) |
47KΩ/Ohm |
| Q2电阻比(R1/R2) Q2 Resistance Ratio |
0.047 |
| 直流电流增益hFE DC Current Gain(hFE) |
80~140 |
| 截止频率fT Transtion Frequency(fT) |
|
| 耗散功率Pc Power Dissipation |
500mW/0.5W |
| Description & Applications |
Features •Dual Bias Resistor Transistors •NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network •Simplifies Circuit Design •Reduces Board Space •Reduces Component Count •Available in 8 mm, 7 inch Tape and Reel •AEC−Q101 Qualified and PPAP Capable •NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements •These are Pb−Free Devices |
| 描述与应用 |
特点 •双偏置电阻晶体管 •NPN和PNP硅表面贴装晶体管与单片偏置电阻网络 •简化电路设计 •缩小板级空间 •减少元件数 •8毫米，7英寸磁带和卷轴 •通过AEC-Q101认证和PPAP能力 •的NSV前缀为汽车和其他应用程序需要独特的网站和控制变更要求 •这些都是Pb-Free设备 |