| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 15V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 12V |
| 集电极连续输出电流ICCollector Current(IC) | 100mA/0.1A |
| 截止频率fTTranstion Frequency(fT) | 7.5Ghz |
| 直流电流增益hFEDC Current Gain(hFE) | 50~200 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 700mW/0.7W |
| Description & Applications | NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA • Power amplifier for DECT and PCN systems • fT = 7.5GHz F = 1.5 dB at 900MHz |
| 描述与应用 | NPN硅RF晶体管 •低噪声，低失真宽带天线放大器和电信系统高达1.5GHz的集电极电流从20mA到80mA •功率放大器DECT和PCN系统 •FT =的7.5GHz F =1.5dB(在900MHz时） |