| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 8V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 5V |
| 集电极连续输出电流ICCollector Current(IC) | 6.5mA |
| 截止频率fTTranstion Frequency(fT) | 5GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 50~200 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 325mW/0.325W |
| Description & Applications | NPN 5 GHz wideband transistor FEATURES Low current consumption Low noise figure Gold metallization ensures excellent reliability SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope.It is intended for low power amplifiers, oscillators and mixers particularly in RF portable communication equipment (cellular phones, cordless phones, pagers) up to 2 GHz. |
| 描述与应用 | NPN5 GHz的宽带晶体管 特点 低电流消耗 低噪声系数 黄金金属确保卓越的可靠性 SOT323信封。 说明 NPN晶体管在一个塑料SOT323 envelope.It适用于低功率的放大器， 特别是在RF便携式通信设备（手机，无绳电话，寻呼机）高达2 GHz的振荡器和混频器。 |