| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -40V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −40V |
| 集电极连续输出电流ICCollector Current(IC) | -4A |
| 截止频率fTTranstion Frequency(fT) | 110MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 200 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | −450mV/-0.45V |
| 耗散功率PcPoWer Dissipation | 360mW/0.36W |
| Description & Applications | 40 V PNP low VCEsat (BISS) transistor Features Low VCEsat Ultra low collector-emitter saturation voltage VCEsat 4 A continuous collector current capability IC (DC) Up to 15 A peak current Very low collector-emitter saturation resistance High efficiency due to less heat generation SOT457 (SC-74) SMD plastic package. NPN complement: PBSS302ND Applications Power management functions Charging circuits DC-to-DC conversion MOSFET gate driving Power switches (e.g. motors, fans) Thin Film Transistor (TFT) backlight inverter |
| 描述与应用 | 40 V PNP低VCEsat（BISS）晶体管 特点 低VCEsat 超低集电极 - 发射极饱和电压VCE监测 4连续集电极电流能力IC（DC） 高达15 A峰值电流 极低的集电极 - 发射极饱和电阻 由于产生的热量少，效率高 SOT457（SC-74）SMD塑料包装。 NPN补充：PBSS302ND的 应用 电源管理功能。 充电电路 的DC-DC转换 MOSFET栅极驱动 电源开关（如电机，风机） 薄膜晶体管（TFT）背光逆变器 |