| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 25V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 20V |
| 集电极连续输出电流ICCollector Current(IC) | 1A |
| 截止频率fTTranstion Frequency(fT) | 100MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 60~400 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 500mV/0.5V |
| 耗散功率PcPower Dissipation | 1W |
| Description & Applications | 20V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT89 • BVCEO > 20V • High current capability Maximum Continuous Current IC = 1A • Low saturation voltage VCE(sat) < 500mV @ 1A • Complementary PNP type: BCX69 • Lead Free, RoHS Compliant (Note 1) • Halogen and Antimony Free, “Green” Device (Note 2) • Qualified to AEC-Q101 Standards for High Reliability |
| 描述与应用 | 20V NPN硅平面中功率晶体管SOT89 •BVCEO> 20V •高电流能力最大连续电流IC= 1A •低饱和电压VCE（sat）的<500mV的@1A •互补PNP类型：BCX69 •无铅，符合RoHS标准（注1） •卤素和锑免费，“绿色”设备（注2） •符合AEC-Q101标准的高可靠性 |