| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | −600V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −600V |
| 集电极连续输出电流ICCollector Current(IC) | -1A |
| 截止频率fTTranstion Frequency(fT) | 30MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 60~120 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -300mV/-0.3V |
| 耗散功率PcPoWer Dissipation | 2W |
| Description & Applications | PNP SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING FEATURES • New package with dimensions in between those of small signal and power signal package • High voltage • Fast switching speed • Complementary transistor with 2SC4942 |
| 描述与应用 | PNP硅三重扩散型晶体管高速高压开关 特点 •新的封装，尺寸之间的小信号和功率信号包 •高电压 •开关速度快 •互补晶体管2SC4942 |