| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) |
60V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) |
50V |
| 集电极连续输出电流ICCollector Current(IC) |
100mA/0.1A |
| 截止频率fTTranstion Frequency(fT) |
120MHz |
| 直流电流增益hFEDC Current Gain(hFE) |
210~340 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage |
500mV/0.5V |
| 耗散功率PcPower Dissipation |
250mW/0.25W |
| Description & Applications |
NPN general purpose transistor FEATURES • High current • Low voltage APPLICATIONS • General purpose switching and amplification. |
| 描述与应用 |
NPN通用晶体管 特点 •高电流 •低电压 应用 •通用开关和放大。 |