| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 60V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流ICCollector Current(IC) | 200mA/0.2A |
| 截止频率fTTranstion Frequency(fT) | |
| 直流电流增益hFEDC Current Gain(hFE) | 180~390 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 100mV/0.1V |
| 耗散功率PcPower Dissipation | 100mW/0.1W |
| Description & Applications | Silicon PNP epitaxial planer type For general amplification Features • High foward current transfer ratio hFE • SSS-mini type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing |
| 描述与应用 | 硅PNP外延刨床类型 对于一般的放大 特点 •高电流传输比HFE FOWARD •SSS迷你型封装，允许裁员和变薄 带包装的设备，通过自动插入 |