| 最大源漏极电压VdsDrain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | -12V |
| 最大漏极电流IdDrain Current | -4.2A/-0.2A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 120mΩ@ VGS = -2.5V, ID = -3.3A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.6~-1.5V |
| 耗散功率PdPower Dissipation | 1.6W |
| Description & Applications | P-Channel -2.5 Vgs Specified Power Trench MOSFET General Description This P-Channel -2.5V specified MOSFET uses Fairchild’s advanced low voltage Power Trench process. It has been optimized for battery power management applications. Applications • Battery management • Load switch Features • Low gate charge • High performance trench technology for extremely low RDS(ON) • Compact industry standard SC75-6 surface mount package |
| 描述与应用 | P沟道-2.5 VGS指定的动力沟道MOSFET 概述 此P沟道2.5V指定的MOSFET采用飞兆半导体先进的低电压功率沟槽过程。它已被优化的电池电源管理应用。 应用 •电池管理 •负荷开关 特点 •低栅极电荷 •高性能沟道技术极低的RDS（ON） •紧凑型工业标准SC75-6表面贴装封装 |