| 最大源漏极电压VdsDrain-Source Voltage | 12V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 8V |
| 最大漏极电流IdDrain Current | 4.5A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 63mΩ@ VGS =1.8V, ID =1.6A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 0.4~1V |
| 耗散功率PdPower Dissipation | 6.5W |
| Description & Applications | Dual N-Channel 12-V (D-S) MOSFET FEATURES • Halogen-free • TrenchFET Power MOSFET - Small Footprint Area APPLICATIONS • Load Switch for Portable Applications |
| 描述与应用 | 双N沟道12-V（D-S）的MOSFET 特点 •无卤 •TrenchFET功率MOSFET - 小占位面积 应用 •用于便携式应用的负载开关 |