| 最大源漏极电压Vds Drain-Source Voltage | 16V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 8V |
| 最大漏极电流Id Drain Current | 2A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.22Ω/Ohm @1A,4V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.5-1.1V |
| 耗散功率Pd Power Dissipation | 500mW/0.5W |
| Description & Applications | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) DC−DC Converter, Relay Drive and Motor Drive Applications Features Silicon N-channel MOS FET DC−DC Converter, Relay Drive and Motor Drive Applications 2.5 V gate drive Low drain−source ON resistance High forward transfer admittance Low leakage current Enhancement−mode |
| 描述与应用 | 东芝场效应晶体管的硅N沟道MOS类型（π-MOSV） DC-DC转换器，继电器驱动和电机驱动应用 特性 硅N沟道MOS FET DC-DC转换器，继电器驱动和电机驱动应用 2.5 V门驱动 低漏源导通电阻 高正向转移导纳 低漏电流 增强型 |