| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) Q1/Q2 |
-15V/50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) Q1/Q2 |
-12V/50V |
| 集电极连续输出电流IC Collector Current(IC) Q1/Q2 |
-500mA/100mA |
| Q1基极输入电阻R1 Input Resistance(R1) |
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| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) |
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| Q1电阻比(R1/R2) Q1 Resistance Ratio |
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| Q2基极输入电阻R1 Input Resistance(R1) |
10KΩ/Ohm |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) |
10KΩ/Ohm |
| Q2电阻比(R1/R2) Q2 Resistance Ratio |
1 |
| 直流电流增益hFE DC Current Gain(hFE) Q1 |
270~680 |
| 截止频率fT Transtion Frequency(fT) |
260MHz/250MHz |
| 耗散功率Pc Power Dissipation |
150mW/0.15W |
| Description & Applications |
Features •Power management (dual transistors) •2SA2018 and DTC114E are housed independently in a EMT6 or UMT6 package.. •Power switching circuit in a single package. •Mounting cost and area can be cut in half. |
| 描述与应用 |
特点 •电源管理（双晶体管） •2SA2018和DTC114E被安置独立在EMT6 UMT6包装.. •电源开关电路，在单一封装中。 •安装成本和面积可减少一半 |