| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 40V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 30V |
| 集电极连续输出电流ICCollector Current(IC) | 3A |
| 截止频率fTTranstion Frequency(fT) | 90MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 60~400 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 300mV/0.3V |
| 耗散功率PcPower Dissipation | 1W |
| Description & Applications | NPN Silicon power transistor low collector saturation voltage ：Vce<0.5v excellent hFE linearity and high hFE：hFE :60 TO 400 |
| 描述与应用 | NPN硅功率晶体管 低集电极饱和电压VCE<0.5V HFE出色的线性度和高HFE：HFE：60至400 |