| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 8V |
| 最大漏极电流Id Drain Current | 3.76A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | |
| 耗散功率Pd Power Dissipation | 1.92W |
| Description & Applications | µTrenchMOS™ enhanced logic level FET Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. TrenchMOS™ technology Very fast switching Low threshold voltage Surface mount package |
| 描述与应用 | μTrenchMOS™增强逻辑电平FET 描述 N沟道增强型场效应晶体管在一个塑料包装用 的TrenchMOS™技术 开关速度非常快 低阈值电压 表面贴装型封装 |