| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 30V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 15V |
| 集电极连续输出电流ICCollector Current(IC) | 50mA |
| 截止频率fTTranstion Frequency(fT) | 600Mhz |
| 直流电流增益hFEDC Current Gain(hFE) | 20 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 400mV/0.4V |
| 耗散功率PcPower Dissipation | 225mW/0.225W |
| Description & Applications | NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. |
| 描述与应用 | NPN RF晶体管 这个装置是专为使用RF放大器，振荡器和 乘数在1.0 MA集电极电流30 mA范围。 |