| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -50V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −40V |
| 集电极连续输出电流ICCollector Current(IC) | -3A |
| 截止频率fTTranstion Frequency(fT) | 300MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 100~200 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -300mV/-0.3V |
| 耗散功率PcPoWer Dissipation | 1.5W |
| Description & Applications | PNP Epitaxial Planar Silicon Transistor High-Speed Switching Applications Features • Adoption of FBET, MBIT processes. • Large current capacity. • Low collector-to-emitter saturation voltage. • High-speed switching. • Small-sized package. |
| 描述与应用 | PNP外延平面硅晶体管 高速开关应用 特点 •通过FBET，MBIT过程。 •大电流容量。 •低集电极 - 发射极饱和电压。 •高速开关。 •小型包装。 |