| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 60V/-60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V/-50V |
| 集电极连续输出电流IC Collector Current(IC) | 500mA/-500mA |
| 截止频率fT Transtion Frequency(fT) | 200MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 85~340 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 350mV/-350mV |
| 耗散功率Pc Power Dissipation | 300mW |
| Description & Applications | Features • Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half Applications • For general amplification |
| 描述与应用 | 特点 •NPN硅外延平面型（TR1）硅PNP外延平面型（TR2） •两个要素纳入一包装 •减少安装面积和装配成本的一半 应用 •对于一般的放大 |