| 最大源漏极电压VdsDrain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
| 最大漏极电流IdDrain Current | 200mA/0.2A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 3Ω@ VGS = 10V, ID = 500mA |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 1.0~2.5V |
| 耗散功率PdPower Dissipation | 150mW/0.15W |
| Description & Applications | TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type • High-Speed Switching Applications • Analog Switch Applications • Small package • Low ON-resistance : Ron = 3.3 Ω (max) (@VGS = 4.5 V) : Ron = 3.2 Ω (max) (@VGS = 5 V) : Ron = 3.0 Ω (max) (@VGS = 10 V) |
| 描述与应用 | 东芝场效应晶体管的硅N沟道MOS类型 •高速开关应用 •模拟开关应用 •小型封装 •低导通电阻：RON =3.3Ω（最大值）（@ VGS= 4.5 V） RON=3.2Ω（最大）（@ VGS= 5 V） ：RON =3.0Ω（最大值）（@ VGS= 10 V） |