| 最大源漏极电压VdsDrain-Source Voltage | -12V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | -8V |
| 最大漏极电流IdDrain Current | -8A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 36mΩ@ VGS ='-1.8V, ID ='-28A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.4~-1V |
| 耗散功率PdPower Dissipation | 4.2W |
| Description & Applications | P-Channel 12-V (D-S) MOSFET FEATURES • Trench FET Power MOSFET • PWM Optimized APPLICATIONS • Load Switch • PA Switch |
| 描述与应用 | P沟道12-V（D-S）的MOSFET 特点 •沟槽FET功率MOSFET •PWM优化 应用 •负荷开关 •PA开关 |