| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 25V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 20V |
| 集电极连续输出电流ICCollector Current(IC) | 4A |
| 截止频率fTTranstion Frequency(fT) | 200MHz |
| 直流电流增益hFEDC Current Gain(hFE) | >70 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 250mV/0.25V |
| 耗散功率PcPower Dissipation | 1.5W |
| Description & Applications | applications NPN epitaxial planar silicon transistors compact motor driver applications features *low saturation voltage *contains diode between collector and emitter *contains bias resistances between base and emitter *large current capacity *smAll size mAke it easy to provide high density smAll size hybird ics |
| 描述与应用 | 应用 NPN外延平面硅晶体管 紧凑型电机驱动器应用 特点 *低饱和电压 *包含集电极和发射极之间的二极管 *包含偏置基极和发射极之间的电阻 *大电流容量 *体积小，可以很容易地提供高密度，小尺寸摄录集成电路 |