| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 20V |
| 集电极连续输出电流ICCollector Current(IC) | 3A |
| 截止频率fTTranstion Frequency(fT) | 180MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 160~560 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 60mV |
| 耗散功率PcPower Dissipation | 150mW/0.15W |
| Description & Applications | Silicon NPN epitaxial planer type For DC-DC converter Features • Low collector to emitter saturation voltage VCE(sat) • S-mini type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing |
| 描述与应用 | NPN硅外延平面型 用于DC-DC转换器 特点 •低集电极到发射极饱和电压VCE（SAT） •S-迷你型包装，使瘦身变薄 带包装的设备，通过自动插入 |