| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 50V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 40V |
| 集电极连续输出电流ICCollector Current(IC) | 50mA |
| 截止频率fTTranstion Frequency(fT) | 120MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 400~800 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 50mV |
| 耗散功率PcPower Dissipation | 125mW/0.125W |
| Description & Applications | Silicon NPN epitaxial planar type For low-frequency amplification Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat) High emitter to base voltage VEBO. Low noise voltage NV |
| 描述与应用 | NPN硅外延平面型 对于低频放大 特点 高正向电流传输比HFE。 低集电极到发射极饱和电压VCE（SAT） 高发射器基极电压VEBO。 低噪声电压NV |