| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) 去、Q1/Q2 |
50V/50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) Q1/Q2 |
50V/50V |
| 集电极连续输出电流IC Collector Current(IC) Q1/Q2 |
100mA/100MA |
| Q1基极输入电阻R1 Input Resistance(R1) |
22KΩ |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) |
22KΩ |
| Q1电阻比(R1/R2) Q1 Resistance Ratio |
1 |
| Q2基极输入电阻R1 Input Resistance(R1) |
22KΩ |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) |
22KΩ |
| Q2电阻比(R1/R2) Q2 Resistance Ratio |
1 |
| 直流电流增益hFE DC Current Gain(hFE) |
60 |
| 截止频率fT Transtion Frequency(fT) Q1/Q2 |
150mhz/150MHZ |
| 耗散功率Pc Power Dissipation Q1/Q2 |
125mw/0.125W |
| Description & Applications |
Features • Silicon NPN epitaxial planar type • Two elements incorporated into one package (transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half. |
| 描述与应用 |
特点 •NPN硅外延平面型 •两个要素纳入一个包（内置电阻晶体管） •减少安装面积和汇编一半的费用 |