| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -150V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −150V |
| 集电极连续输出电流ICCollector Current(IC) | -50mA |
| 截止频率fTTranstion Frequency(fT) | 200MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 185~330 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -1000mV/-1V |
| 耗散功率PcPoWer Dissipation | 150mW/0.15W |
| Description & Applications | PNP Silicon epitaxial planar transistor For high breakdown voltage low-noise amplification Complementary to 2SD1821 Features High collector to emitter voltage VCEO. Low noise voltage NV. S-Mini type package |
| 描述与应用 | PNP硅外延平面晶体管 对于高击穿电压低噪声放大 补充型2SD1821 特点 高集电极发射极电压VCEO。 低噪声电压NV。 S-迷你型封装 |