| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -100V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −100V |
| 集电极连续输出电流ICCollector Current(IC) | -20mA |
| 截止频率fTTranstion Frequency(fT) | 200MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 200~700 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -300mV/-0.3V |
| 耗散功率PcPoWer Dissipation | 125mW/0.125W |
| Description & Applications | PNP Silicon epitaxial planar transistor For high breakdown voltage low-frequency amplification Features • High collector-emitter voltage (Base open) VCEO • SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing |
| 描述与应用 | PNP硅外延平面晶体管 对于高击穿电压的低频放大 特点 •高集电极 - 发射极电压（基本打开）VCEO •SS-迷你型包装，让精简的设备和通过自动插入磁带包装 |