| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 15V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 8V |
| 集电极连续输出电流ICCollector Current(IC) | 50mA |
| 截止频率fTTranstion Frequency(fT) | 9Ghz |
| 直流电流增益hFEDC Current Gain(hFE) | 50~160 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 80mW |
| Description & Applications | Silicon NPN Epitaxial High Frequency Amplifier / Oscillator Features • Super compact package; (1.4 × 0.8 × 0.59mm) • High power gain and low noise figure; (PG = 9 dB, NF = 1.1 dB typ, at f = 900 Mhz, VCE = 1 V) |
| 描述与应用 | NPN硅外延 高频放大器/振荡器 特点 •超级紧凑的封装; （1.4×0.8×0.59毫米） •高功率增益和低噪声系数; NF= 1.1 dB（PG=9分贝，在f =900兆赫，VCE = 1 V） |