| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 12V |
| 集电极连续输出电流ICCollector Current(IC) | 50mA |
| 截止频率fTTranstion Frequency(fT) | 900Mhz~2Ghz |
| 直流电流增益hFEDC Current Gain(hFE) | 25~250 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 400mV/0.4V |
| 耗散功率PcPower Dissipation | |
| Description & Applications | NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 µA to 30 mA range in common emitter or common base mode of operation, and in low frequency drift, high ouput UHF oscillators. Sourced from Process 40. |
| 描述与应用 | NPN RF晶体管 该设备被设计用于UHF / VHF低噪声放大器 集电极电流在100μA到30 mA范围内共同 射或共基的运作模式，并在低频 漂移，高输出UHF振荡器。 |