| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 16V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 9.5V |
| 集电极连续输出电流ICCollector Current(IC) | 320mA/0.32A |
| 截止频率fTTranstion Frequency(fT) | 1.9GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 80~330 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 4.8V |
| 耗散功率PcPower Dissipation | 28mW |
| Description & Applications | 4.8 V NPN Common Emitter Medium Power Output Transistor Features • 4.8 Volt Operation • +28.0 dBm Pout @ 900 MHz,Typ. • 70% Collector Efficiency @␣ 900 MHz, Typ. • 9 dB Power Gain @ 900 MHz, Typ. • -31 dBc IMD3 @ Pout of 21␣ dBm per Tone, 900␣ MHz,Typ. • 50% Smaller than SOT-223 Package Applications • Medium Power Driver Device for Cellular/PCS,ISM 900, WLAN • Output Power Device for ISM 900, Cordless, WLAN |
| 描述与应用 | 4.8 V共发射极NPN 中等输出功率晶体管 特点 •4.8伏操作 •+28.0 dBm功率输出@900 MHz的典型。 •70％的集热效率␣900兆赫，典型值。 •9 dB功率增益@ 900 MHz时，典型值。 •-31 dBc的IMD3@功率输出，21␣dBm每个音，900␣兆赫，典型值。 •50％小于SOT-223封装 应用 •中等功率驱动器 蜂窝/ PCS，ISM900，WLAN设备 •输出功率ISM900，无绳电话，无线局域网设备 |