| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -60V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −50V |
| 集电极连续输出电流ICCollector Current(IC) | −200mA/-0.2A |
| 截止频率fTTranstion Frequency(fT) | 200MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 150~500 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -300mV/-0.3V |
| 耗散功率PcPoWer Dissipation | 200mW/0.2W |
| Description & Applications | PNP epitaxial planar transistor For low frequency amplifier application Feature Excellent linearity of DC current gain Small collector to emitter saturation voltage |
| 描述与应用 | PNP外延平面晶体管 对于低频放大器中的应用 特点 直流电流增益，出色的线性度 小集电极到发射极饱和电压 |